Products

US6M2TR

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-363-6
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds – Drain-Source Breakdown Voltage:	20 V, 30 V
Id – Continuous Drain Current:	1 A, 1.5 A
Rds On – Drain-Source Resistance:	240 mOhms, 390 mOhms
Vgs – Gate-Source Voltage:	- 12 V, + 12 V
Vgs th – Gate-Source Threshold Voltage:	700 mV, 500 mV
Qg – Gate Charge:	1.6 nC, 2.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	1 W
Channel Mode:	Enhancement
Series:	US6M2
Packaging:	Reel
Packaging:	Cut Tape

Brand:	ROHM Semiconductor
Configuration:	Dual
Fall Time:	6 ns, 10 ns
Height:	0.77 mm
Length:	2 mm
Product Type:	MOSFET
Rise Time:	9 ns, 8 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel MOSFET, 1 P-Channel MOSFET
Type:	MOSFET
Typical Turn-Off Delay Time:	15 ns, 25 ns
Typical Turn-On Delay Time:	7 ns, 9 ns
Width:	1.7 mm
Part # Aliases:	US6M2
Unit Weight:	0.000265 oz

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