Products

TPW4R50ANH,L1Q

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	DSOP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	100 V
Id – Continuous Drain Current:	92 A
Rds On – Drain-Source Resistance:	4.5 mOhms
Vgs – Gate-Source Voltage:	- 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	2 V
Qg – Gate Charge:	58 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	142 W
Channel Mode:	Enhancement
Tradename:	U-MOSVIII-H
Series:	TPW4R50ANH
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Fall Time:	13 ns
Height:	0.73 mm
Length:	5 mm
Product Type:	MOSFET
Rise Time:	9.6 ns
	5000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	52 ns
Typical Turn-On Delay Time:	25 ns
Width:	5 mm
Unit Weight:	0.003668 oz

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