Products

CSD19538Q2

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	WSON-FET-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	100 V
Id – Continuous Drain Current:	14.4 A
Rds On – Drain-Source Resistance:	59 mOhms
Vgs – Gate-Source Voltage:	- 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	2.8 V
Qg – Gate Charge:	5.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	20.2 W
Channel Mode:	Enhancement
Tradename:	NexFET
Series:	CSD19538Q2
Packaging:	Reel
Packaging:	Cut Tape

Brand:	Texas Instruments
Configuration:	Single
Fall Time:	2 ns
Forward Transconductance – Min:	19 S
Height:	0.75 mm
Length:	2 mm
Product Type:	MOSFET
Rise Time:	3 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	7 ns
Typical Turn-On Delay Time:	5 ns
Width:	2 mm
Unit Weight:	0.000208 oz

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