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STGWT60H65DFB
Short Description:
制造商:
STMicroelectronics
产品种类:
IGBT 晶体管
RoHS:
详细信息
技术:
Si
封装 / 箱体:
TO-3P
安装风格:
Through Hole
配置:
Single
集电极—发射极最大电压 VCEO:
650 V
集电极—射极饱和电压:
1.6 V
栅极/发射极最大电压:
- 20 V, + 20 V
在25 C的连续集电极电流:
80 A
Pd-功率耗散:
375 W
最小工作温度:
- 55 C
最大工作温度:
+ 175 C
系列:
STGWT60H65DFB
封装:
Tube
商标:
STMicroelectronics
集电极最大连续电流 Ic:
60 A
栅极—射极漏泄电流:
250 nA
产品类型:
IGBT Transistors
工厂包装数量:
300
子类别:
IGBTs
单位重量:
6.756 g
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