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STGWT60H65DFB

Short Description:

STMicroelectronics
产品种类: IGBT 晶体管
RoHS:  详细信息
Si
TO-3P
Through Hole
Single
650 V
1.6 V
- 20 V, + 20 V
80 A
375 W
- 55 C
+ 175 C
STGWT60H65DFB
Tube
商标: STMicroelectronics
集电极最大连续电流 Ic: 60 A
栅极—射极漏泄电流: 250 nA
产品类型: IGBT Transistors
300
子类别: IGBTs
单位重量: 6.756 g

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