Products

STGWT60H65DFB

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBT Transistors
RoHS:	Details
Technology:	Si
Package / Case:	TO-3P
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Maximum Gate Emitter Voltage:	- 20 V, + 20 V
Continuous Collector Current at 25 C:	80 A
Pd – Power Dissipation:	375 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGWT60H65DFB
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	60 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
	300
Subcategory:	IGBTs
Unit Weight:	0.238311 oz

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