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Toshiba
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SSM6N15FE(TE85L,F)
Short Description:
制造商:
Toshiba
产品种类:
MOSFET
RoHS:
详细信息
技术:
Si
安装风格:
SMD/SMT
封装 / 箱体:
ES6-6
晶体管极性:
N-Channel
通道数量:
2 Channel
Vds-漏源极击穿电压:
30 V
Id-连续漏极电流:
100 mA
Rds On-漏源导通电阻:
4 Ohms
Vgs – 栅极-源极电压:
- 20 V, + 20 V
最小工作温度:
- 55 C
最大工作温度:
+ 150 C
Pd-功率耗散:
150 mW
通道模式:
Enhancement
系列:
SSM6N15
封装:
Reel
商标:
Toshiba
配置:
Dual
高度:
0.55 mm
长度:
1.6 mm
产品:
MOSFET Small Signal
产品类型:
MOSFET
工厂包装数量:
4000
子类别:
MOSFETs
晶体管类型:
2 N-Channel
宽度:
1.2 mm
单位重量:
8.200 mg
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HN2D01JE(TE85L,F)
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