Products

SI8483DB-T2-E1

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	MicroFoot-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	12 V
Id – Continuous Drain Current:	16 A
Rds On – Drain-Source Resistance:	22 mOhms
Vgs – Gate-Source Voltage:	- 10 V, + 10 V
Vgs th – Gate-Source Threshold Voltage:	800 mV
Qg – Gate Charge:	65 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	13 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Series:	SI8
Packaging:	Reel
Packaging:	Cut Tape

Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	10 ns
Forward Transconductance – Min:	10 S
Product Type:	MOSFET
Rise Time:	25 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	20 ns
Unit Weight:	0.004528 oz