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RV1C002UNT2CL
Short Description:
制造商:
ROHM Semiconductor
产品种类:
MOSFET
RoHS:
详细信息
技术:
Si
安装风格:
SMD/SMT
封装 / 箱体:
DFN-0806-3
晶体管极性:
N-Channel
通道数量:
1 Channel
Vds-漏源极击穿电压:
20 V
Id-连续漏极电流:
150 mA
Rds On-漏源导通电阻:
2 Ohms
Vgs – 栅极-源极电压:
- 8 V, + 8 V
Vgs th-栅源极阈值电压:
300 mV
Qg-栅极电荷:
-
最小工作温度:
- 55 C
最大工作温度:
+ 150 C
Pd-功率耗散:
100 mW
通道模式:
Enhancement
系列:
RV1C002UN
封装:
Reel
封装:
Cut Tape
封装:
MouseReel
商标:
ROHM Semiconductor
配置:
Single
下降时间:
25 ns
产品类型:
MOSFET
上升时间:
4 ns
工厂包装数量:
8000
子类别:
MOSFETs
晶体管类型:
1 N-Channel MOSFET
典型关闭延迟时间:
12 ns
典型接通延迟时间:
3 ns
零件号别名:
RV1C002UN
单位重量:
143.050 mg
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