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QS8J4TR
Short Description:
Product Attribute
Attribute Value
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Manufacturer:
ROHM Semiconductor
Product Category:
MOSFET
RoHS:
Details
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSMT-8
Transistor Polarity:
P-Channel
Number of Channels:
2 Channel
Vds – Drain-Source Breakdown Voltage:
30 V
Id – Continuous Drain Current:
4 A
Rds On – Drain-Source Resistance:
40 mOhms, 40 mOhms
Vgs – Gate-Source Voltage:
- 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:
2.5 V
Qg – Gate Charge:
13 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd – Power Dissipation:
1.5 W
Channel Mode:
Enhancement
Series:
QS8J4
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
ROHM Semiconductor
Configuration:
Dual
Fall Time:
50 ns, 50 ns
Product Type:
MOSFET
Rise Time:
20 ns, 20 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Transistor Type:
2 P-Channel
Typical Turn-Off Delay Time:
80 ns, 80 ns
Typical Turn-On Delay Time:
8 ns, 8 ns
Part # Aliases:
QS8J4
Unit Weight:
0.000353 oz
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