Products

IRF3205PBF

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	55 V
Id – Continuous Drain Current:	110 A
Rds On – Drain-Source Resistance:	8 mOhms
Vgs – Gate-Source Voltage:	- 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	2 V
Qg – Gate Charge:	97.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd – Power Dissipation:	150 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Height:	15.65 mm
Length:	10 mm
Product Type:	MOSFET
	1000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Width:	4.4 mm
Unit Weight:	0.068784 oz

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