Products

IPG20N04S4-08

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds – Drain-Source Breakdown Voltage:	40 V
Id – Continuous Drain Current:	20 A
Rds On – Drain-Source Resistance:	7.6 mOhms
Vgs – Gate-Source Voltage:	- 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	3 V
Qg – Gate Charge:	36 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd – Power Dissipation:	65 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	OptiMOS
Series:	OptiMOS-T2
Packaging:	Reel
Packaging:	Cut Tape

Brand:	Infineon Technologies
Configuration:	Dual
Height:	1.27 mm
Length:	5.9 mm
Product Type:	MOSFET
	5000
Subcategory:	MOSFETs
Transistor Type:	2 N-Channel
Width:	5.15 mm
Part # Aliases:	IPG2N4S48XT SP000705582 IPG20N04S408ATMA1
Unit Weight:	0.007055 oz