Products

HN4A56JU(TE85L,F)

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	Bipolar Transistors – BJT
RoHS:	Details
Mounting Style:	SMD/SMT
Transistor Polarity:	PNP
Configuration:	Dual
Collector- Emitter Voltage VCEO Max:	50 V
Collector- Base Voltage VCBO:	50 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	100 mV
Maximum DC Collector Current:	150 mA
Pd – Power Dissipation:	200 mW
Gain Bandwidth Product fT:	60 MHz
Minimum Operating Temperature:	-
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Packaging:	Cut Tape

Brand:	Toshiba
Product Type:	BJTs – Bipolar Transistors
	3000
Subcategory:	Transistors
Technology:	Si
Unit Weight:	0 oz

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