Products

FDN352AP

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SSOT-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	30 V
Id – Continuous Drain Current:	1.3 A
Rds On – Drain-Source Resistance:	180 mOhms
Vgs – Gate-Source Voltage:	- 25 V, + 25 V
Vgs th – Gate-Source Threshold Voltage:	2.5 V
Qg – Gate Charge:	1.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	500 mW
Channel Mode:	Enhancement
Series:	FDN352AP
Packaging:	Reel
Packaging:	Cut Tape

Brand:	onsemi / Fairchild
Configuration:	Single
Fall Time:	15 ns
Forward Transconductance – Min:	2 S
Height:	1.12 mm
Length:	2.9 mm
Product:	MOSFET Small Signal
Product Type:	MOSFET
Rise Time:	15 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	1 P-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	10 ns
Typical Turn-On Delay Time:	4 ns
Width:	1.4 mm
Part # Aliases:	FDN352AP_NL
Unit Weight:	0.001058 oz

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