Products

EM6M2T2R

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-563-6
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds – Drain-Source Breakdown Voltage:	20 V
Id – Continuous Drain Current:	200 mA
Rds On – Drain-Source Resistance:	1 Ohms, 1.2 Ohms
Vgs – Gate-Source Voltage:	- 8 V, + 8 V, – 10 V, + 10 V
Vgs th – Gate-Source Threshold Voltage:	1 V
Qg – Gate Charge:	-
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	150 mW
Channel Mode:	Enhancement
Series:	EM6M2
Packaging:	Reel
Packaging:	Cut Tape

Brand:	ROHM Semiconductor
Configuration:	Dual
Fall Time:	10 ns, 17 ns
Forward Transconductance – Min:	200 mS
Product:	MOSFET Small Signal
Product Type:	MOSFET
Rise Time:	10 ns, 4 ns
	8000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel MOSFET, 1 P-Channel MOSFET
Typical Turn-Off Delay Time:	15 ns, 17 ns
Typical Turn-On Delay Time:	5 ns, 6 ns
Part # Aliases:	EM6M2
Unit Weight:	0.000212 oz

Previous: PTZTE255.1B

Next: 1SS356TW11