Products

CSD16323Q3

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	25 V
Id – Continuous Drain Current:	60 A
Rds On – Drain-Source Resistance:	4.5 mOhms
Vgs – Gate-Source Voltage:	- 8 V, + 10 V
Vgs th – Gate-Source Threshold Voltage:	900 mV
Qg – Gate Charge:	6.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	74 W
Channel Mode:	Enhancement
Tradename:	NexFET
Series:	CSD16323Q3
Packaging:	Reel
Packaging:	Cut Tape

Brand:	Texas Instruments
Configuration:	Single
Fall Time:	6.3 ns
Height:	1 mm
Length:	3.3 mm
Product Type:	MOSFET
Rise Time:	15 ns
	2500
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	5.3 ns
Width:	3.3 mm
Unit Weight:	0.001541 oz

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