Products

2SB1386T100R

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	Bipolar Transistors – BJT
RoHS:	Details
Mounting Style:	SMD/SMT
Transistor Polarity:	PNP
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	20 V
Collector- Base Voltage VCBO:	30 V
Emitter- Base Voltage VEBO:	6 V
Collector-Emitter Saturation Voltage:	350 mV
Maximum DC Collector Current:	5 A
Pd – Power Dissipation:	2 W
Gain Bandwidth Product fT:	120 MHz
Minimum Operating Temperature:	-
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Packaging:	Cut Tape

Brand:	ROHM Semiconductor
Continuous Collector Current:	- 5 A
DC Collector/Base Gain hfe Min:	82
DC Current Gain hFE Max:	390
Height:	1.5 mm
Length:	4.5 mm
Product Type:	BJTs – Bipolar Transistors
	1000
Subcategory:	Transistors
Technology:	Si
Width:	2.5 mm
Unit Weight:	0.004603 oz

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